کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748785 894789 2009 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors
چکیده انگلیسی
The thermal behavior of trench-isolated bipolar transistors is thoroughly investigated. Fully 3D numerical simulations are performed to analyze the impact of all technological parameters of interest. Based on numerical results, a novel strategy to analytically evaluate the temperature field is proposed, which accounts for the heat propagation through the trench and the nonuniform heat flux distribution over the interface between the silicon box surrounded by trench and the underlying substrate. The resulting model is proved to compare with numerical simulations more favorably than the other approaches available from the literature. As a consequence, it can be employed for an accurate, yet fast evaluation of the thermal resistance of a trench-isolated device as well as of the temperature gradients within the silicon box.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 3, March 2009, Pages 297-307
نویسندگان
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