کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748788 894789 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Visualization of local gate control in a ZnO inter-nanowire junction device
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Visualization of local gate control in a ZnO inter-nanowire junction device
چکیده انگلیسی

Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source–drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 3, March 2009, Pages 320–323
نویسندگان
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