کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748822 | 894790 | 2012 | 4 صفحه PDF | دانلود رایگان |

Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1 THz, making these diodes excellent choices for high-frequency applications, such as sub-harmonic mixers for frequency conversion.
► 6.2 Å Sb-based pN heterojunction diodes.
► Diodes for high-speed, low-power applications.
► Diodes showed excellent electrical performance: η≈1.2η≈1.2, strong rectifying, area-dependent behavior.
► RC-cutoff frequencies over 1 THz measured for smaller area devices (⩽15 μm2).
Journal: Solid-State Electronics - Volume 67, Issue 1, January 2012, Pages 105–108