کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748822 894790 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-frequency, 6.2 Å pN heterojunction diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
High-frequency, 6.2 Å pN heterojunction diodes
چکیده انگلیسی

Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1 THz, making these diodes excellent choices for high-frequency applications, such as sub-harmonic mixers for frequency conversion.


►  6.2 Å Sb-based pN heterojunction diodes.
►  Diodes for high-speed, low-power applications.
►  Diodes showed excellent electrical performance: η≈1.2η≈1.2, strong rectifying, area-dependent behavior.
►  RC-cutoff frequencies over 1 THz measured for smaller area devices (⩽15 μm2).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 67, Issue 1, January 2012, Pages 105–108
نویسندگان
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