Raman study of GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum dots: A dielectric continuum approach

We have presented a theoretical calculation of the scattering intensity for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Singularities in the Raman spectra for various xx are found and interpreted. The numerical results are also compared with that of experiments.