A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET

A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics.

Research highlights
► Caclulate band-to-band tunneling current in 2D device structures.
► Proposed algorithm based on multi-dimension extension of WKB approximation.
► Physical and robust simulation of tunneling FET is achieved with the new algorithm.