A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

In this paper, a new compact charge based DC model for the drain current of long channel fully depleted ultra-thin body SOI MOSFETs and asymmetric double-gate MOSFETs with independent gate operation (ADGMOSFETs) is presented. The model was validated by both TCAD simulations and electrical measurements with a good agreement. In particular, great care was taken during the derivation of the model in order to respect the physics of the device and to make the correct approximations. The obtained solutions can be viewed as a generalization of classical MOS theory to the case of undoped fully depleted ADGMOS. As a result, the model consists of relatively simple equations and is a promising approach for the compact modeling and parameter extraction of fully depleted SOI transistors.

Research highlights
► Valid for long-channel undoped ADGMOSFETS with independent gate operation.
► Fully analytical and explicit derivation with no iterative solutions.
► Accessible front and back gate charges, potentials and currents.
► Unification of symmetric and asymmetric cases.
► Physical solutions similar to classical MOS theory.