کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749101 | 894807 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Surface-recombination-free InGaAs/InP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the nonself-aligned HBTs was independent of the emitter periphery, indicating that the surface recombination was removed by the passivation. For the self-aligned HBTs, the current gain was still dependent on the emitter periphery after the passivation due to the base contact recombination. A surface leakage channel has been identified to result in a significant increase in the base contact recombination. The passivation has two effects: one is the surface recombination velocity reduction and the other is the surface leakage channel elimination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 7, July 2008, Pages 1088–1091
Journal: Solid-State Electronics - Volume 52, Issue 7, July 2008, Pages 1088–1091
نویسندگان
Z. Jin, X. Liu, W. Prost, F.-J. Tegude,