کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749113 | 894809 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
This paper investigates the impact of the metallic nanotube (M-NT) presence within CNTFET circuits: circuit yield and performances are analyzed using calibrated compact models for both the CNTFET and the M-NT. The major cause of technological dispersion in CNTFET technology comes from the control of the carbon nanotube chirality. This lack of control may lead to the presence of metallic nanotubes in the transistor. These M-NTs create shorts which dramatically increase the source-drain leakage current. The random presence and position of M-NT in the ring oscillator circuit is analyzed using Monte Carlo simulation. Two inverter layout configurations are considered in the study and we deduce that a strong improvement in term of yield and power consumption can be obtained using a specific layout configuration where the tubes are shared for the P-CNTFET and the N-CNTFET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 10, October 2009, Pages 1103-1106
Journal: Solid-State Electronics - Volume 53, Issue 10, October 2009, Pages 1103-1106
نویسندگان
Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer,