Capacitance modeling of short-channel double-gate MOSFETs

We present 2-D physics based modeling of short-channel double-gate MOSFETs of nanoscale dimensions. We have derived a precise, self-consistent framework model for the device electrostatics, the drain current, and the charge conserving capacitances, covering all regimes of device operation from subthreshold to strong inversion. The modeling has no adjustable parameters and implicitly incorporates scaling with device dimensions and material composition. The foundation of the 2-D modeling is an analytical description of the inter-electrode capacitive coupling between the four electrodes, based on conformal mapping techniques. The model is shown to be in excellent agreement with numerical simulations.