کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749187 | 894814 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers](/preview/png/749187.png)
چکیده انگلیسی
Operation properties of polysilicon–oxide–nitride–oxide–silicon (SONOS)-type nonvolatile semiconductor memory (NVM) devices with stacked tunneling and charge trapping layers were investigated in this work. Clear enhancement on operation speed and satisfactory retention of NVM device were achieved by adopting stacked tunneling oxide. Enhancement on programming speed but degradation on erasing operation was observed for device with stacked charge trapping layer. Finally, operating characteristics of devices with stacked tunneling oxide, stacked charge trapping layer, and combining both stacked tunneling oxide and charge trapping layer were compared and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 10, October 2008, Pages 1573–1577
Journal: Solid-State Electronics - Volume 52, Issue 10, October 2008, Pages 1573–1577
نویسندگان
Ping-Hung Tsai, Kuei-Shu Chang-Liao, Tai-Yu Wu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, Lung-Sheng Lee, Ming-Jin Tsai,