کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749188 894814 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications
چکیده انگلیسی

We developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical “top-down” complementary metal–oxide–semiconductor (CMOS) fabrication technology. NEMS cantilever switch (NCLS) and NEMS clamp switch (NCS) with 30 nm-thick TiN beam and 20 nm-thick air-gap were successfully fabricated and electrically characterized. The fabricated NCLS showed ideal on/off current characteristics with an essentially zero off current, a sub-threshold slope of less than 3 mV/decade, and an on/off current ratio over 105 in air ambient. Also, the NCLS exhibited an endurance of over several hundred of switching cycles under dc and ac bias conditions in air ambient. Suspended beam memory (SBM) cell array structure was suggested for high density non-volatile memory applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 10, October 2008, Pages 1578–1583
نویسندگان
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