Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference

Latch-up effects in two stage cascaded CMOS digital inverters due to high power pulsed electromagnetic interference, are reported. Latch-up was observed to occur at and above 25.5 dB m of pulsed interference at frequencies of 1.23 GHz and 4 GHz. When a latch-up event occurred, the devices failed to respond to the input logic signal even after the pulsed interference was removed. Devices required to be reset to return to normal operation. Latch-up for pulsed interference at the higher frequency of 4 GHz occurred at higher power levels, indicating a suppression of the interference effects at higher frequencies due to the by-pass path effects provided by the intrinsic device capacitances. High power interference induced excess carriers and the corresponding body currents that activated the parasitic bipolar transistor action were found to play a key role in triggering the latch-ups, and are proposed here as the main mechanism for the upsets. The parasitic resistances R1 and R2 for the cascaded inverters were calculated to be 4.3 and 2.8 kΩ, respectively, and the corresponding excess body currents triggering the latch-ups were 0.163 and 0.25 mA, respectively.