Studying the effect of material parameters on detectivity in a p–n In0.53Ga0.47As photovoltaic detector

In the paper, a relationship of detectivity with material parameters is given by a theoretical calculation. An In1−xGaxAs photovoltaic detector structure with x = 0.47 is used as an example for this study. The results show that the detectivity of a photodetector can be enhanced by optimizing the carrier concentration, thickness and surface recombination velocity during the structure growth and device fabrication.