کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749346 1462267 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
چکیده انگلیسی

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering rsat and source injection velocity υinj were observed, accounting for the large drive current IDsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in rsat is related to a shorter critical length ℓ0 for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υinj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issues 11–12, November–December 2007, Pages 1444–1449
نویسندگان
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