Modeling the effect of source/drain junction depth on bulk-MOSFET scaling

Accurate threshold voltage (VT) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing VT models cannot model the impact of source/drain junction depth on VT rolloff. A new model is proposed that can accurately model bulk-MOSFET VT including the source/drain junction depth. The model also provides a scale-length that can be used to rapidly predict the minimum channel-length for a given set of technology parameters.