کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749420 894827 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
چکیده انگلیسی

InGaN/GaN multiple quantum well (MQW) structures were grown by MOCVD. A strain-relief underlying layer was employed to reduce the strain in the InGaN well layers arising from the large lattice mismatch between InN and GaN. Samples were investigated by photoluminescence (PL), electroluminescence (EL) and atom force microscopy (AFM) to characterize their optical and morphological properties. By inserting an underlying layer, the PL intensity was increased more than three times. Under small injection current (1–15 mA), the blue-shift of EL peak wavelength was decreased from 8 to1.8 nm, the surface morphology was improved and the density of V-pits was reduced from 14–16 × 108 to 2–4 × 108/cm2. Further, the 20-mA output power was increased by more than 50%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 6, June 2007, Pages 860–864
نویسندگان
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