Wideband characterization of SOI materials and devices

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted. The extraction of electrical equivalent circuits for passive and active devices in silicon-on-insulator (SOI) technology is described. The electrical characteristics of the SOI substrate versus DC bias and high frequency signal is presented as well as the wideband behavior of several advanced MOSFETs, such as 120 nm partially depleted (PD) SOI MOSFETs, 120 nm dynamic threshold (DT) voltage MOS, 50 nm FinFETs as well as long-channel planar double gate MOSFETs. Based on these wideband equivalent circuits, RF designers can define optimized circuits and precious information can be delivered to engineers for the improvement of the fabrication process as well.