کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749513 | 1462270 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Device-partition method using equivalent-circuit model in three-dimensional device simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, the device-partition method (DPM) is proposed to improve the efficiency in 3-D device simulation. The idea of DPM is that a device is divided into several parts, and, therefore, the matrix solver only solves a part of the device at a time. In order to obtain the accurate solution, the iteration method is necessary in DPM. By the continuous iteration, we can obtain the accurate simulation results. PN diode and MOSFET are demonstrated using DPM in this paper. The comparison of simulation results between our simulator and 3-D Davinci device simulator is presented. The consumption of CPU time and memory is also discussed in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 7â8, JulyâAugust 2006, Pages 1206-1211
Journal: Solid-State Electronics - Volume 50, Issues 7â8, JulyâAugust 2006, Pages 1206-1211
نویسندگان
Chia-Cherng Chang, Szu-Ju Li, Yao-Tsung Tsai,