کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749519 1462270 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device
چکیده انگلیسی

The dark current density–voltage characteristic of Au/ZnPc/Al device at room temperature has been investigated. Results showed a rectification behavior. At low forward bias, the current density was found to be ohmic, while at high voltages, space charge limited the current mechanism dominated by exponential trapping levels. Junction parameters such as rectification ratio (RR), series resistance (Rs), and shunt resistance (Rsh) were found to be 9.42, 9.72 MΩ, and 0.88 × 103 MΩ, respectively. The current density–voltage characteristics under white light illumination (100 W/m2) gives values of 0.55 V, 3 × 10−3 A/m2, 0.18 and 5.8 × 10−4% for the open circuit voltage, Voc, the short circuit current density (Jsc), the fill factor (FF), and conversion efficiency (η), respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 7–8, July–August 2006, Pages 1238–1243
نویسندگان
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