An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects

An explicit surface-potential-based MOSFET model has been proposed in this work here, which takes into account the quantum mechanical effects that arise in deep-submicron MOSFETs. The coupled Schrödinger’s and Poisson’s equations have been solved by using a variational wave function approach, as proposed by Fang and Howard. The resulting surface potential model is analytical, technology mapped, and completely continuous over the entire range of operation. The surface potential and the inversion charge density calculated using the proposed model show good match with the results of the numerical simulations obtained from a self-consistent Schrödinger–Poisson solver for a wide range of substrate doping and oxide thickness. The simulated values of the drain current match closely with the experimental results published elsewhere. The device small-signal parameters, e.g., transconductance, output conductance, etc., pass the standard benchmark tests suggested by Suyama and Tsividis qualitatively, thereby validating the approach of the model presented.