کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749587 894834 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
چکیده انگلیسی

A high-quality Ga-doped ZnO film was epitaxially grown on a R-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Photoconductor devices with Al/Ti Ohmic contacts were fabricated. Photoluminescence and photocurrent measurements were carried out to study the emission and absorption properties of the Ga-doped ZnO film. Both spectra are consistent with each other showing good response in the ultraviolet region and weak response in the green–yellow band. Peak responsivity of 1.68 A/W at 20 V bias for 374 nm light was obtained in the ultraviolet region. Transient response of the device is slow due to the presence of the deep levels.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 7, July 2007, Pages 1014–1017
نویسندگان
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