کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749587 | 894834 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A high-quality Ga-doped ZnO film was epitaxially grown on a R-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Photoconductor devices with Al/Ti Ohmic contacts were fabricated. Photoluminescence and photocurrent measurements were carried out to study the emission and absorption properties of the Ga-doped ZnO film. Both spectra are consistent with each other showing good response in the ultraviolet region and weak response in the green–yellow band. Peak responsivity of 1.68 A/W at 20 V bias for 374 nm light was obtained in the ultraviolet region. Transient response of the device is slow due to the presence of the deep levels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 7, July 2007, Pages 1014–1017
Journal: Solid-State Electronics - Volume 51, Issue 7, July 2007, Pages 1014–1017
نویسندگان
L.J. Mandalapu, F.X. Xiu, Z. Yang, J.L. Liu,