کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749636 | 894837 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Implementation of a scalable VBIC model for SiGe:C HBTs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This work examines the utility of semi-physical vertical bipolar inter-company (VBIC) model for the first time to develop for an accurate, easy and fast scaling methodology for high-frequency SiGe:C heterojunction bipolar transistors (HBTs) with a peak fT of 75 GHz fabricated in a low-cost BiCMOS technology. The methodology allows one to find transistor models from single-finger transistor to multi-finger and variable length emitter devices with a minimal parameter extraction procedure. The devices modeled include several base-emitter structures in parallel, on top of a single collector to obtain different transistor area. The scaling rules are given in detail. Using this methodology, scalable VBIC model parameters were generated to describe the DC and RF behavior of SiGe:C HBTs up to peak fT and fmax within ±10% accuracy. The key advantage of this methodology is that one does not need any special test structure while keeping the extraction procedure simple and fast.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 399-407
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 399-407
نویسندگان
A. Chakravorty, R.F. Scholz, D. Knoll, A. Fox, B. Senapati, C.K. Maiti,