کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749649 | 894837 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Bipolar power transistors (BPTs) are widely used in various kinds of high-voltage and medium-power applications due to their low on-state voltage drop and high current capability. In this paper, the influence of minority carrier extracted by the base electrode on the current gain of BPTs is presented first and studied in detail. It is suggested that the minority carrier extracted by the base electrode is responsible for the current gain change. Based upon this theory, a structure with a local heavily-doped base (LHDB) to increase the current gain is proposed and investigated. The increase of the current gain can be controlled by the doping of the LHDB and the location of the LHDB relative to the emitter region. The analytical results show a good agreement with the numerical simulation and experiment results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 480-488
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 480-488
نویسندگان
Bo Zhang, Wanjun Chen, Kun Yi, Zhaoji Li,