کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749670 | 894840 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and performance of optoelectronic devices with metal/diamond-like carbon Schottky contact
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and performance of optoelectronic devices with metal/diamond-like carbon Schottky contact Fabrication and performance of optoelectronic devices with metal/diamond-like carbon Schottky contact](/preview/png/749670.png)
چکیده انگلیسی
In this paper, we report the successful fabrication of the optoelectronic devices based on diamond-like carbon films deposited by r.f. plasma-enhanced chemical vapor deposition. In the metal–semiconductor–metal structure devices, three kinds of metals Al, Au and Ag are separately deposited on the same DLC films to form metal/DLC contacts. It is confirmed that three metal/DLC contacts are all Schottky contacts by the current–voltage characteristics of devices. Three barrier heights are obtained from theoretic analyses of the I–V characteristics to be 0.74 eV, 0.79 eV and 0.85 eV respectively for Al, Au and Ag. The spectral response of the photodetector is also obtained and the main detecting wavelength region is around 500–600 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 423–427
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 423–427
نویسندگان
Xiang Cheng, Meiyu Zhang, Xiaohong Chen, Chao Chen,