کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749673 | 894840 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of traps on charge transport in organic semiconductors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The effect of extrinsic traps on the charge transport in organic semiconductors has been investigated. An analytical model describing hopping transport with traps is formulated on the basis of percolation theory. The results show that the presence of a trap distribution with energy offset and width different from that of the intrinsic density of states does not change the basic phenomenology of hopping transport, as revealed by the temperature dependence of the conductivity at high temperature. However the traps may significantly affect the transport at low temperature. The relation between trap concentration and conductivity is discussed. The model predictions are in good agreement with experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 445–448
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 445–448
نویسندگان
Ling Li, Gregor Meller, Hans Kosina,