کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749713 894845 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers
چکیده انگلیسی

ZnSe metal–insulator–semiconductor (MIS) photodetectors with SiO2 and Ba0.25Sr0.75TiO3 (BST) insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large, and the noise equivalent power (NEP) was 1.24 × 10−13 and 1.9 × 10−13 for the homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers, respectively. The corresponding normalized detectivity (D∗) was 2.55 × 1012 and 1.67 × 1012 cm Hz0.5 W−1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 5, May 2006, Pages 750–753
نویسندگان
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