Measurement of generation parameters on Ru/HfO2/Si MOS capacitor

We report an extended analysis of the generation lifetime and surface generation velocity, sg, measurement on an advanced gate stack with a high-κ dielectric layer using leakage current characteristics in inversion condition. The proposed technique was examined on a Ru/HfO2/SiO2/Si MOS capacitor grown by metal-organic chemical vapour deposition and annealed in forming gas (FGA, 90% N2 + 10% H2) at temperatures 430 and 510 °C. It was found that sgeff decreased with increasing FGA temperature, however, the density of interface traps, Dit, unexpectedly increases after the second cycle of FGA. The results are discussed together with capacitance versus gate voltage measurement.