SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

SiGe films were deposited and in situ doped by RF-magnetron co-sputtering on oxidized and bare silicon wafers. Post-deposition annealing was done in the temperature range from 580 to 950 °C. Structural and compositional characterization was performed by XRD, Raman, TEM and XPS analysis. Electrical properties were obtained by four-point probe measurements on SiGe films, and current–voltage measurements on SiGe(p+)–Si(n) diode structures. Excellent rectifying properties of SiGe–Si diodes were observed, and the conduction current mechanisms at different annealing temperatures were discussed.