کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749802 | 894850 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrostatic coupling between nanocrystals in a quantum flash memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrostatic coupling between nanocrystals in a quantum flash memory Electrostatic coupling between nanocrystals in a quantum flash memory](/preview/png/749802.png)
چکیده انگلیسی
In quantum flash memories, the floating gate is a nanocrystal (NC) layer which can be charged from the channel. To our knowledge, no attempt has been carried out to evaluate the interactions between nanocrystals inside a layer. On the contrary, since the NCs are commonly supposed to be independent, reduced systems of single NC are often considered. In our model and simulations, we show that the NC charging is not only related to relevant thicknesses (tunnel, oxide) and NC radii, but also to the electrostatic coupling that exists between two nanocrystals inside the floating gate layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 205-208
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 205-208
نویسندگان
A.S. Cordan, Y. Leroy, B. Leriche,