کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749811 894850 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology
چکیده انگلیسی

A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I–V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 254–258
نویسندگان
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