Failure mode analysis of AlGaAsGaAs HBTs using electrostatic discharge method

The failure modes of AlGaAsGaAs heterojunction bipolar transistors (HBTs) showing increases of base leakage current found during the bias and temperature reliability test have been examined and analysed by using an electrostatic discharge (ESD) method. In the examination for HBT having an emitter of 2 × 20 μm, increases of a base leakage current have been observed when an ESD of around 100 V is applied through a base-emitter junction. Furthermore, increases of a collector leakage current have been observed with the additional ESD of around 150 V. Since no fatal effects for the transistor amplification are found in the high current region, the degradations are concluded to be responsible to the local damages of the base layer at the edge of base-emitter junction. Applying the Wunsch-Bell model to the damaged region, the temperature is estimated to be in a range from 400 to 550°C. It is thought that thermal destruction occurs in a base layer.