کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752640 1462223 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage
ترجمه فارسی عنوان
تشخیص تله ها باعث ایجاد سر و صدای تلگراف تصادفی در حین تله گذر تونل زنی ناشی از تخلیه ناشی از تله می شود
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی


• Characterizations of two traps that cause RTN in TAT GIDL were conducted.
• For the first time, electron trapping mechanism from conduction band was observed.
• The distance between the two traps was accurately extracted for the oxide trap.
• To accurately extract the trap distance, the effective permittivity (εeff) was used.

This paper presents an analysis of traps causing random telegraph noise (RTN) in trap-assisted tunneling (TAT) gate-induced drain leakage (GIDL) current. RTN was shown for the first time to occur as a result of electron trapping rather than hole trapping. In addition, the proper effective permittivity of two different materials is used to accurately determine the distance between two traps causing RTN in TAT GIDL in an oxide.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 109, July 2015, Pages 42–46
نویسندگان
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