Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage

• Characterizations of two traps that cause RTN in TAT GIDL were conducted.
• For the first time, electron trapping mechanism from conduction band was observed.
• The distance between the two traps was accurately extracted for the oxide trap.
• To accurately extract the trap distance, the effective permittivity (εeff) was used.

This paper presents an analysis of traps causing random telegraph noise (RTN) in trap-assisted tunneling (TAT) gate-induced drain leakage (GIDL) current. RTN was shown for the first time to occur as a result of electron trapping rather than hole trapping. In addition, the proper effective permittivity of two different materials is used to accurately determine the distance between two traps causing RTN in TAT GIDL in an oxide.