A novel BEM–LIGBT with high current density on thin SOI layer for 600 V HVIC

• A new LIGBT structure for HVIC on thin SOI layer with an improved current density.
• The utilization of BEM–LIGBT can reduce the width of the dV/dt noise pulse.
• The body effect modulation in BEM–LIGBT is realized by a metal resistor.
• The IV characteristic of the BEM–LIGBT at high temperature is proposed.

A novel Body Effect Modulation Lateral Insulated Gate Bipolar Transistor (BEM–LIGBT) on the thin SOI layer featuring with a metal resistor connected with the body region and the n plus region without adding extra mask steps is experimentally proposed in this paper. In the proposed device structure, the electron current is the dominant component of the total current and it can be improved by increasing the resistance of the metal resistor, which is verified by the theoretical derivation and numerous TCAD simulations. The total current density of the proposed high voltage (above 690 V) BEM–LIGBT is increased by about 65% at VGE = 5 V, compared with the conventional structure on the same SOI layer. In addition, the BEM–LIGBT is successfully used in the level-shift circuit for 600 V high voltage gate drive integrated circuit (HVIC). The width of the dV/dt noise pulse in the circuit is decreased by about 45% by using the BEM–LIGBT.