Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire

• Implementation of a Poisson–Schrödinger solver for Si and III–V nanowires.
• Quantum confinement is modeled by generalizing Hänsch’s formula.
• A model for the threshold voltage shift is deduced.
• The impact on the variability of III–V nanowires threshold voltages is discussed.

In this work, a quantum correction model for the threshold voltage of cylindrical nanowires is presented. Using a cylindrical self-consistent 1-D Poisson–Schrödinger (PS) numerical resolution of the charge profile as a reference, a generalized and compact Hänsch’s formula is proposed and systematically validated on simulation. As an example of application, this equation is then applied to III–V nanowires and to the study of the threshold voltage variability of these devices. The results suggest an increased variability due to the small mass of III–V semiconductors and to the larger quantum confinement of nanowire architectures.