InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

• We report IFVD in 940 nm InGaAs/GaAsP/GaInP system.
• Five cap layers are applied to the QWI and successful intermixing is obtained.
• The 940 nm LD with NAW has a higher COD level than the conventional LD.

In order to fabricate 940 nm InGaAs/GaAsP/GaInP semiconductor lasers with non-absorbing window (NAW), the induced quantum well intermixing (QWI) is investigated using impurity free vacancy disordering (IFVD) method. Successful intermixing is obtained with 24 nm bandgap blue shift between the window and gain regions. Under destructive testing conditions, the catastrophic optical damage (COD) power for the NAM LD is about 116% higher than the conventional LD.