A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation – Part I: The ferroelectric common-drain amplifier

A physically-derived nonquasi-static model describing the behavior of the ferroelectric common-drain amplifier is presented. The model is based on the method of partitioned channel and ferroelectric layers and is valid in accumulation, depletion, and the three inversion cases: weak, moderate, and strong. The equations of this model are based on the standard MOSFET equations that have been modified to reflect the ferroelectric properties. The model code is written in MATLAB and outputs voltage plots with respect to time. The accuracy and effectiveness of the model are verified by a few test cases, where the modeled results are compared to empirically-derived oscilloscope plots.

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► The ferroelectric common-darin amplifier is modeled in MATLAB.
► The model is physically-derived, nonquasi-static and empirically accurate.
► The model is based on partitioned ferroelectric layer.
► The model modifies standard MOSFET equations to include ferroelectric effect.
► Two oscilloscope plots are provided to verify the model’s accuracy.