کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
752877 | 1462257 | 2012 | 5 صفحه PDF | دانلود رایگان |
We developed the solution processed Ag source/drain electrodes for stable organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene). Even though there is a large hole injection barrier between Ag and TIPS-pentacene, the TFT with solution-processed Ag shows good performance. It is due to the continuous formation of organic semiconductor between solution-processed Ag electrodes and TFT channel region with well-organized π–π stacking. The electrical stability of the TFT is much better than that of the TFT using sputtered Ag source/drain electrodes.
► TIPS-pentacene OTFT with solution-processed source/drain Ag electrode.
► High performance and stable TIPS pentacene OTFT.
► The continuous formation of TIPS-pentacene between Ag electrodes and TFT channel region.
► Ordering of TIPS-pentacene crystalline on solution-processed Ag electrode.
Journal: Solid-State Electronics - Volume 75, September 2012, Pages 1–5