Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures

ZnO based resistance random access memories that showed resistive switching behaviors were successfully fabricated. The influences of different annealing temperatures on the crystal structure and resistive switching characteristics were investigated. By sweeping the bias voltage, Cu/ZnO/n+-Si structures exhibited unipolar resistive switching characteristics with low switching voltages. The resistance ratio between high resistance state (HRS) and low resistance state (LRS) was as high as 104. The forming voltage increased linearly with increasing annealing temperatures. However, there was a slight variation for the switching voltages of Vreset and Vset. The variations of reset current, HRS and LRS resistances were also investigated as a function of annealing temperature. The current conduction behaviors of HRS and LRS were studied and the switching characteristic mechanism was explained based on the filamentary model.

► Cu/ZnO/n+-Si based ReRAMs were fabricated.
► Influences of annealing temperatures on the resistive switching characteristics were investigated.
► Filamentary model was proposed to explain the mechanism of the resistive switching.