کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752894 1462257 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors
چکیده انگلیسی

The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μFE), and unit channel length resistance (rch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiNX, SiOX, and SiOX/SiNX. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μFE values due to the relatively large rch values.


► Modeling and simulation of a-IGZO TFTs using TCAD.
► Extraction of subgap DOS modeling parameters.
► Analysis for relationship between channel resistance and subgap DOS of a-IGZO TFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 75, September 2012, Pages 93–96
نویسندگان
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