Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications

► Single-sided non-overlapped implantation nMOSFETs for multiple memory functions. ► Mask ROMs programmed by the source drain extension (SDE) implantation. ► EEPROMs programmed by trapping charges in the side-wall nitride spacers. ► Antifuses programmed by introducing the punch-through stress at the drain side.