کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753071 | 895492 | 2011 | 5 صفحه PDF | دانلود رایگان |
An enhancement-load inverter using bottom-gated ZnO nanoparticle thin-film transistors and a polymer gate dielectric is demonstrated. The deposition of the ZnO active layer is done by spin coating of a colloidal dispersion and is hence cost-effective. Since the maximum process temperature is 200 °C, the presented device is furthermore suitable for plastic substrates. Although hysteresis is observed, the inverter shows reasonable transfer characteristics with a gain of up to 5.5 V/V at a supply voltage between 10 V and 15 V, whereas the static power dissipation is lower than 6 μW.
Research highlights
► ZnO nanoparticles are used as semiconducting material in low-cost TFT.
► The integration technique is simple and compatible to plastic substrates.
► Inverters based on nanoparticle-TFTs are functional blocks for low-cost circuits.
► The inverter performance is partially superior to competing devices.
Journal: Solid-State Electronics - Volume 62, Issue 1, August 2011, Pages 110–114