Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

► HfSiO dielectric/TiN metal gate and rotated layout in MuGFET devices for analog application. ► Thinner TiN metal gate achieve a larger intrinsic voltage gain. ► HfSiON dielectric presented reduced Early voltage resulting in degraded analog behavior. ► MuGFET devices with rotated layout showed larger mobility and smaller Early voltage.