کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753248 895505 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel self-refreshable capacitorless DRAM cell and its extended applications
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A novel self-refreshable capacitorless DRAM cell and its extended applications
چکیده انگلیسی

A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 9, September 2010, Pages 985–990
نویسندگان
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