کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753257 | 895505 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces](/preview/png/753257.png)
چکیده انگلیسی
We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties. With the proposed process, Aluminum Nitride (AlN) thin films are obtained having exceptional c-axis crystal orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding that of the epitaxial AlN electromechanical coupling constant. Fully functional single-mask resonators were successfully fabricated with this process working around 2.35 GHz and enjoying Q-values as high as 1300.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 9, September 2010, Pages 1041–1046
Journal: Solid-State Electronics - Volume 54, Issue 9, September 2010, Pages 1041–1046
نویسندگان
Mohamed Abd Allah, Robert Thalhammer, Jyrki Kaitila, Thomas Herzog, Werner Weber, Doris Schmitt-Landsiedel,