کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753333 895515 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Current conduction models in the high temperature single-electron transistor
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Current conduction models in the high temperature single-electron transistor
چکیده انگلیسی

Single-electron transistor drain current is studied as a function of the temperature. A current conduction model based on the physical properties of the tunnel junctions is proposed to explain the discrepancies observed at high temperature between the experimental data and Monte Carlo simulations. The extension of the model includes a thermionic and a field assisted emission component. A demonstration of this approach is presented for a metallic single-electron transistor characterized up to 430 K.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 5, May 2009, Pages 478–482
نویسندگان
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