Symmetric linearization method for double-gate and surrounding-gate MOSFET models

Symmetric linearization method is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFET. This leads to a core compact model of certain multiple-gate transistors that has the form almost identical to that used in a standard PSP MOSFET model. The accuracy of the proposed technique is verified by comparison with the exact results. The new core is compatible with the previous version of the double gate MOSFET model that has been found in agreement with the experimental data including short-channel effects and frequency response.