کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753383 | 895522 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs](/preview/png/753383.png)
This paper presents a charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poisson’s equation with fixed charge and inversion charge terms, a closed-form equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sah’s dual integral, a drain current expression with concise form is derived. Based on the Ward-Dutton linear-charge-partition method and the current continuity principle, all trans-capacitances are obtained analytically. The developed model is valid in all operation regions from the sub-threshold to strong inversion and from the linear to the saturation region without any smooth function. The model predictions have been extensively compared with 3D numerical simulations and a good agreement is observed in most of the operation regions with a wide range of geometrical parameters.
Journal: Solid-State Electronics - Volume 53, Issue 1, January 2009, Pages 49–53