RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements

We report on the broadband electrical characterization of thick mesoporous silicon layers used as RF microplates for on-chip integration of high-Q passive devices in a CMOS-compatible process. To measure the RF losses of the microplate we have fabricated several designs of Coplanar Waveguides (CPWs), for form-factors relevant to the sizes of on-chip passive RF devices, on thick mesoporous Si layers (RF microplates) of various thicknesses, and we compared the results with those obtained from similar CPWs integrated directly on the p-type Si substrate. For maximum measurement sensitivity of the loss, the CPWs were designed to be very good transmission lines matched to 50 Ω port impedances. We also characterized the grown mesoporous Si by performing electromagnetic simulations of the structure and identifying the measured and simulated S-parameters over a broadband frequency region, for the appropriate simulator input of complex permittivity. The measured results show that, for CPW features commensurate with the scale of on-chip RF passive devices, a 50-μm-thick mesoporous Si layer on the Si substrate reduces the losses to 1/6th–1/4th of the values corresponding to a p-type Si substrate, showing that mesoporous Si is an excellent material for CMOS-compatible on-chip integration of high-Q passive devices.