کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753418 | 895526 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface](/preview/png/753418.png)
By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(1 0 0) surface. Capacitance–voltage measurements yield a flat-band barrier height of 0.97 eV. Activation-energy and current–voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(1 0 0) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1 eV between aluminum and S-passivated p-type Si(1 0 0) surface. The operation of these metal/Si(1 0 0) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p–n junction, with the increase in barrier height from 0.97 eV to 1.1 eV. Temperature-dependent current–voltage measurements reveal that the Ni/S-passivated n-type Si(1 0 0) junction is stable up to 110 °C.
Journal: Solid-State Electronics - Volume 52, Issue 11, November 2008, Pages 1778–1781