کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753419 | 895526 | 2008 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate](/preview/png/753419.png)
SiGe heterojunction bipolar phototransistors based on Si1−yGey virtual substrate have been proposed in this paper. The current gain and external quantum efficiency of the heterojunction bipolar phototransistors are calculated by solving one-dimensional diffusion equations. The computed results show that external quantum efficiency increases with the increase of Ge content of Si1−yGey virtual substrate and a high external quantum efficiency of 142 can be obtained in the heterojunction bipolar phototransistor with ten periods of Ge/Si0.4Ge0.6 multi-quantum wells on virtual substrate with Ge content of 0.6. The dependences of external quantum efficiency and current gain on structure parameters of the heterojunction bipolar phototransistors are investigated in detail. It is useful for design and optimization of the heterojunction bipolar phototransistors.
Journal: Solid-State Electronics - Volume 52, Issue 11, November 2008, Pages 1782–1790